Stable Black Phosphorous epi-wafer

Black Phosphorous 2D thin films promise to surpass Graphene as the most favorable materials for future nano- and opto-electronics thin film solar, photodetectors, and logical devices.

Current synthesis routes, exfoliation and plasma, face major challenges i) volume, ii) stability and iii) uniformity. Yale inventors have found a way to make high quality wafer-scale deposition possible with no device degradation in air.

Proof of Demonstration:

• Boron Nitride/Black Phosphorous heterostructures
• Suits epiwafer and flexible substrate production.
• Uniformity is sufficient for thin-film transistors.
• Atomic layer control allows fine bandgap tuning.
• A novel thin-film BN insulator prevents degradation.

Status:

• Composition and method Patent
• Seeking fabrication partner for high pressure/ temperature reactor collaboration.