III-V semiconductor integration with GaN

An epitaxial growth method to deposit III–V material Gallium Nitride (GaN) on an Si or siliconon-insulator (SOI) wafer, or any amorphous template.

• More versatile version of the conventional Template-Assisted Selective Epitaxy (TASE), but designed specifically for GaN.
• Results in high material quality and is compatible with CMOS processes.
• System fabrication costs may be significantly lower than discrete chip packaging approaches.
• No material defects due to crystal lattice mismatch with Si.

Method

1. Deposition of a textured aluminum nitride seed on SiO2
2. Resulting longitudinal growth of gallium nitride single crystals