GaN-on-Silicon or SOI
III-V semiconductor integration with GaN
An epitaxial growth method to deposit III–V material Gallium Nitride (GaN) on an Si or siliconon-insulator (SOI) wafer, or any amorphous template.
- More versatile version of the conventional Template-Assisted Selective Epitaxy (TASE), but designed specifically for GaN.
- Results in high material quality and is compatible with CMOS processes.
- System fabrication costs may be significantly lower than discrete chip packaging approaches.
- No material defects due to crystal lattice mismatch with Si.
Method
- Deposition of a textured aluminum nitride seed on SiO2
- Resulting longitudinal growth of gallium nitride single crystals