The key factors preventing the widespread use of LD lasers in lighting are:

• Insufficient Power Conversion Efficiency (PCE)
• Aluminum degrades performance and lifetime.

What Nano Porous (NP) GaN offers:

• NP GaN offers 2X higher electrical efficiency (PCE) than commercial State Of The Art LDs.
• Brings LD PCE in line with commercial LEDs.
• NP GaN is Aluminum-free.
• Lowers the minimum current density for emission.
• Allows higher blue/green laser power output (Boosts Optical Field X3).

About NP GaN:

• A novel electrochemical etching process alters the optical index of GaN by making it nanoporous.
• This is a commercially viable process that can be implemented in any LD or LED chip facility.

Yale Patent Status:

• PCT/US2016/033270 ’III-Nitride Edge Emitting Laser Diode of High Confinement Factor’